| PART |
Description |
Maker |
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| TC59S6404 TC59S6404BFT TC59S6404BFT-10 TC59S6404BF |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD16601 UPD16601N UPD16601N-XXX |
MOS Integrated Circuit
|
NEC
|
| UPD16454AP UPD16454A UPD16454AN |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD121A10T1F-E2-AT UPD121A10 UPD121A10T1F-E1-AT UP |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD166015GR-E1-AY UPD166015GR-E2-AY |
MOS INTEGRATED CIRCUIT
|
Renesas Electronics Corporation
|
